S9674_15 Datasheet, PDF (3/5 Pages) Hamamatsu Corporation – Si photodiode

Si photodiode
S9674
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C)
1 nF
100 pF
10 pF
0.1
1
10
Reverse voltage (V)
100
KSPDB0251EA
Directivity
(Typ. Ta=25 °C, light source: tungsten lamp)
20° ^{10° 0° 10°} 20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
80°
70°
80°
90°
90°
100 80 60 40 20 0 20 40 60 80 100
Relative sensitivity (%)
KSPDB0249EA
Dimensional outline (unit: mm)
Photosensitive area
(2 × 2)
Cathode index
5.7
4.6
(4.1)
Photosensitive
surface
1.4 ± 0.2
0.85
(0.55)
Photosensitive
surface
1.05
3.3
1.05 (2 ×) R0.3
(6.5)
(3.2)
Recommended
land pattern
Tolerance unless otherwise
noted: ±0.15, ±2°
KSPDA0179EC
3