S9648-200SB_15 Datasheet, PDF (3/5 Pages) Hamamatsu Corporation – Photo IC diode

Photo IC diode
S9648-200SB
Rise/fall times vs. load resistance
(Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V)
100
10
Rise time
1
Fall time
0.1
0.01
100
1k
10 k
100 k
Load resistance (Ω)
1M
KPICB0077EB
Directivity
(Typ. Ta=25 °C, tungsten lamp)
10° ^0°
20°
30°
40°
10°
20°
30°
40°
50°
60°
50°
60°
70°
70°
80°
80°
90°
90°
100 80 60 40 20 0 20 40 60 80 100
Relative sensitivity (%)
KPICB0174EA
Operating circuit example
Photodiode
for signal offset
Cathode
Photodiode
for signal detection
The drawing surrounded
by the dotted line shows
a schematic diagram of
the photo IC.
Current amp
(Approx. 30000 times)
Internal protection
resistance
(Approx. 150 Ω)
Reverse bias
power supply
Anode
Vout
CL
RL
KPICC0091EC
The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode.
To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a
low-pass filter.
Cutoff
frequency
(fc)
≈
1
2πCLRL
3