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S11155-2048-01 Datasheet, PDF (3/8 Pages) Hamamatsu Corporation – S11155-2048-01 S11156-2048-01
CCD linear image sensors
S11155-2048-01, S11156-2048-01
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Signal output frequency
fc
-
5
10
MHz
Line rate
LR
-
2
4
kHz
Horizontal shift register capacitance
CP1H, CP2H
-
200
-
pF
All reset gate capacitance
CARG
-
100
-
pF
S11155-2048-01
-
Resistive gate capacitance
S11156-2048-01
CREG
-
1000
2000
-
pF
-
Summing gate capacitance
CSG
-
10
-
pF
Reset gate capacitance
CRG
-
10
-
pF
Transfer gate capacitance
CTG
-
100
-
pF
Charge transfer efficiency*7
CTE
0.99995
0.99999
-
-
DC output level
Vout
7
8
9
V
Output impedance
Zo
-
300
-
Ω
Output amplifier return current
Iret
-
0.4
-
mA
Power consumption
S11155-2048-01
S11156-2048-01
PAMP*8
PREG*9
PAMP*8
PREG*9
-
1.4
-
0.7
75
-
2.5
75
12.5
-
mW
1.3
6.3
Resistive gate resistance*10 S11155-2048-01
S11156-2048-01
RREG
0.5
1
2.5
5
4.5
9
kΩ
*7: Charge transfer efficiency per pixel of CCD shift register, measured at half of the full well capacity
*8: Power consumption of the on-chip amplifier plus load resistance
*9: Power consumption at REG
*10: Resistance value between REGH and REGL
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Saturation output voltage
Full well capacity*11
CCD node sensitivity
Dark current*12
Readout noise*13
Dynamic range*14
Non-MPP operation
MPP operation
Symbol
Vsat
Fw
Sv
DS
Nr
DR
S11155-2048-01
Min. Typ. Max.
- Fw × Sv -
-
200
-
7
8
9
-
50
300
-
4
16
-
30
45
-
6670
-
S11156-2048-01
Min. Typ. Max.
- Fw × Sv -
-
200
-
7
8
9
-
100 600
-
8
32
-
30
45
-
6670
-
Unit
V
ke-
μV/e-
ke-/pixel/s
e- rms
-
Spectral response range
Photoresponse nonuniformity*15 *16
Image lag*15 *17
λ
PRNU
L
-
200 to
1100
-
-
200 to
1100
-
nm
-
±3 ±10
-
±3 ±10
%
-
0.1
1
-
0.1
1
%
*11: Operating voltages typ.
*12: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.
*13: Readout frequency is 2 MHz
*14: Dynamic range (DR) = Full well capacity / Readout noise
*15: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
Fixed pattern noise (peak to peak)
*16: Photoresponse nonuniformity =
× 100 [%]
Signal
*17: The ratio of remaining signal after the image sensor is illuminated with one shot of pulsed light that produces one-half of the
saturation output. For more details refer to our technical information on “Resistive gate type CCD linear image sensors with
electronic shutter.”
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