S1087 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – Si photodiode

s Shunt resistance temperature characteristics
100 TΩ
(Typ. VR=10 mV)
10 TΩ
1 TΩ
S1087/-01
100 GΩ
10 GΩ
1 GΩ
S1133/-01
S1133-14
100 MΩ
-20
0
20
40
60 70
AMBIENT TEMPERATURE (˚C)
Si photodiode S1087/S1133 series
s Short circuit current linearity
(Typ. Ta=25 ˚C, “A” light source fully illuminated)
10⁰
10-²
S1133-01
10-⁴
S1133-14
10-⁶
S1087-01
10-⁸
10-¹⁰
10-¹²
S1133
10-¹⁴
S1087
10-¹⁶
10-⁸ 10-⁶ 10-⁴ 10-² 10⁰ 10² 10⁴ 10⁶ 10⁸
INCIDENT LIGHT LEVEL (lx)
KSPDB0122EA
KSPDB0123EA