S10830_15 Datasheet, PDF (3/9 Pages) Hamamatsu Corporation – CMOS area image sensors for X-ray imaging

CMOS area image sensors
S10830, S10834
Electrical and optical characteristics (image sensor, Ta=25 °C, Vdd=5 V)
Parameter
Dark output voltage (effective pixel)*¹²
Saturation output voltage
Random noise*¹³
Dynamic range*¹⁴
Sensitivity*¹⁵
Saturation dose*¹⁵
Photo response non-uniformity*¹² *¹⁶
Blemish
Point
White spot
defect*¹⁷
Black spot
Cluster defect*¹⁸
Big cluster defect*¹⁹
Defect line*²⁰
X-ray resolution
*12: Average value. Excluding defect pixels.
*13: Integration time = 1 s
Symbol
Vdark
Ddark
Vsat
Dsat
VRN
DRN
DR
VRES
DRES
Lsat
PRNU
-
DL
Reso
Min.
-
-
0.8
3280
-
-
45
2.3
9.4
180
-
-
-
-
-
-
15
Typ.
50
200
1.2
4900
1500
6.2
58
3.4
14
350
-
-
-
-
-
-
20
Max.
120
490
-
-
4500
18
-
4.5
18
530
±30
20
20
3
0
15
-
*14: Dynamic range = 20 × log
Saturation output voltage
Random noise
*15: 60 kV tube voltage, no Al plate at X-ray emission
*16: PRNU (%) = ∆V / V × 100
V: average of pixel outputs, ∆V: difference between V and min. or max. output
*17: White spot > 1.2 V/s (4900 LSB/s) at effective pixel: 10 times of the maximum of dark output
Black spot > 50% reduction in response relative to adjacent pixels, measured at half of the saturation output
*18: Continuous 2 to 9 point defects
*19: Continuos 10 or more point defects. (except a defect line)
*20: A defect line consists of 10 or more point defects in 1 pixel width.
Electrical and optical characteristics (trigger photodiode, Ta=25 °C, Vdd=5 V)
Parameter
Saturation voltage
Random noise
Sensitivity*²¹
Offset of A/D converter
*21: Integration time=330 μs, f(MCLK)=20 MHz
Symbol
Vsat
Dsat
VRN
DRN
VRES
DRES
-
Min.
Typ.
Max.
-
2.2
2.9
-
450
590
-
10
-
-
2
-
-
6.8 × 10²
-
-
200
-
-
430
-
Electrical and optical characteristics (A/D converter, Ta=25 °C, Vdd=5 V)
Parameter
Resolution
Connection time
Conversion voltage range
Symbol
RESO
tCON
-
Image sensor
14
1/14 × f(MCLK)
0 to 4
Trigger photodiode
10
1/7168 × f(MCLK)
0 to Vdd
Unit
mV/s
LSB/s
V
LSB
μV rms
LSB rms
dB
mV/μGy
LSB/μGy
μGy
%
-
lines
Lp/mm
Unit
V
LSB
mV rms
LSB rms
mV/μGy
LSB/μGy
LSB
Unit
bit
s
V
3