S10625-01CT Datasheet, PDF (3/5 Pages) Hamamatsu Corporation – Si photodiode

Si photodiode
S10625-01CT
Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 °C)
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
1 nF
100 pA
10 pA
1 pA
100 pF
10 pF
100 fA
0.01
0.1
1
10
Reverse voltage (V)
100
KSPDB0337EA
Dimensional outlines (unit: mm)
Photosensitive
area
1.3 × 1.3
3.2*
(2.3)
Photosensitive
surface
1 pF
0.1
1
10
Reverse voltage (V)
100
KSPDB0338EA
Recommended land pattern (unit: mm)
1.5
2.0
1.5
(4 ×) (R0.25)
Photosensitive
2.0
surface
Component placement example
KSPDC0084EA
2.1
Index mark
Anode (common)
Cathode (common)
Tolerance unless otherwise noted: ±0.2
Chip position accuracy with respect
to package dimensions marked *
X, Y≤±0.3
Electrode
KSPDA0207EA
3