S10140 Datasheet, PDF (3/8 Pages) Hamamatsu Corporation – CCD area image sensor Low readout noise, high resolution (pixel size: 12 μm)

CCD area image sensor S10140/S10141 series
s Electrical and optical characteristics (Ta=25 °C , unless otherwise noted)
Parameter
Symbol
Min.
Saturation output voltage
Vsat
-
Vertical
60
Full well capacity
H o riz o n ta l
Fw
120
S um m ing
150
CCD node sensitivity
Sv
4
Dark current *⁶
MPP mode
25 °C
0 °C
-
DS
-
Readout noise *⁷
Nr
-
Dynamic range *⁸
Line binning
Area scanning
DR
30000
15000
Photo response non-uniform ity *⁹
PRNU
-
Spectral response range
λ
-
B lem is h
Point defect *¹⁰
W hite spots
Black spots
Cluster defect *¹¹
-
-
-
-
Colum n defect *¹²
-
*6: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*7: -50 °C, Operating frequency is 20 kHz.
*8: Dynamic range (DR) = Full well/Readout noise
*9: Measured at the half of the full well capacity output.
Typ.
Fw × Sv
75
150
200
5
100
5
4
37500
18500
±3
200 to 1100
-
-
-
-
Max.
-
-
-
-
6
1000
50
18
-
-
±10
-
0
10
3
0
Unit
V
ke^-
µV/e^-
e^-
/pixel/
s
e^- rms
-
-
%
nm
-
-
-
-
Fixed pattern noise (peak to peak)
Photo response non-uniformity (PRNU) [%]
× 100
Signal
*10: W hite spots
Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C.
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*11: 2 to 9 contiguous defective pixels
*12: 10 or more contiguous defective pixels
s Spectral response (without window) ^*10
s Spectral transmittance characteristics
100
(Typ. Ta=25 ˚C)
100
(Typ. Ta=25 ˚C)
90
BACK-THINNED
S10140/S10141
80
SERIES
70
60
90
80
QUARTZ WINDOW
70
AR COATED SAPPHIRE
60
50
50
40
40
30 FRONT-ILLUMINATED
30
(UV COAT)
20
20
10
0
200
FRONT-ILLUMINATED
400
600
800
1000
1200
10
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
WAVELENGTH (nm)
KMPDB0254EA
WAVELENGTH (nm)
KMPDB0110EA
*10: Spectral response with quartz glass or AR-coated
sapphire are decreased by the transmittance.
s Dark current vs. temperature
1000
(Typ.)
q W indow material
Type No.
S10140 series
Window material
Quartz glass *¹¹
(option: window-less)
AR-coated sapphire *¹²
100
S10141 series
(option: window-less)
S10142 series
10
(two-stage
AR-coated sapphire *¹²
TE-cooled types,
(option: window-less)
1
made to order)
*11: Resin sealing
*12: Hermetic sealing
0.1
0.01
-50 -40 -30 -20 -10 0 10 20 30
TEMPERATURE (˚C)
KMPDB0255EA
3