K12729-010K_15 Datasheet, PDF (3/5 Pages) Hamamatsu Corporation – Two-color detector

Two-color detector
K12729-010K
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
InGaAs (λc=1.7 μm)
1 nF
100 pF
InGaAs (λc=2.55 μm)
10 pF
0.001
0.01
0.1
1
Reverse voltage (V)
10
KIRDB0604EA
Shunt resistance vs. element temperature
10 GΩ
(Typ. VR=10 mV)
1 GΩ
100 MΩ
InGaAs (λc=1.7 μm)
10 MΩ
1 MΩ
100 kΩ
10 kΩ
1 kΩ
InGaAs (λc=2.55 μm)
100 Ω
10 Ω
-20
0
20
40
60
80
Element temperature (°C)
KIRDB0605EA
Dimensional outline (unit: mm)
Index mark
6.6 ± 0.2
Recommended land mark pattern (unit: mm)
2.5
3.3
2.5
Ž

Photosensitive area
InGaAs (λ=2.5 μm)
Window
Photosensitive area
InGaAs (λc=1.7 μm)
2.0 ± 0.2
3.7 ± 0.2
Ž
Œ
2.5 ± 0.2
2.0 ± 0.2
ŒCathode
(InGaAs, λc=1.7 μm)
Anode
(InGaAs, λc=1.7 μm)
ŽCathode
(InGaAs, λc=2.55 μm)
Anode
(InGaAs, λc=2.55 μm)
(0.15)
Center position accuracy of
photosensitive area
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
KIRDA0244EA

Œ
0.5
8.0
2.5
3.3
2.5
KIRDC0121EA
3