G12180-003A Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiodes

InGaAs PIN photodiodes
G12180 series
Dark current vs. reverse voltage
100 nA
(Typ. Ta=25 °C)
10 nA
G12180-050A
G12180-030A
G12180-020A
1 nA
G12180-010A
100 pA
G12180-005A
10 pA
0.01
0.1
G12180-003A
1
10
100
Reverse voltage (V)
KIRDB0542EA
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
G12180-050A
G12180-030A
1 nF
G12180-020A
100 pF
G12180-010A
G12180-005A
10 pF
1 pF
0.01
G12180-003A
0.1
1
10
Reverse voltage (V)
100
KIRDB0543EA
Shunt resistance vs. element temperature
100 GΩ
(Typ. VR=10 mV)
10 GΩ
G12180-003A
1 GΩ
100 MΩ
10 MΩ
1 MΩ
100 kΩ
G12180-020A
G12180-030A
G12180-005A
G12180-010A
10 kΩ
G12180-050A
1 kΩ
-40 -20 0
20 40 60 80 100
Element temperature (°C)
KIRDB0544EA
Dimensional outlines (unit: mm)
(1) G12180-003A/-005A/-010A
5.4 ± 0.2
4.7 ± 0.1
Window
2.2 min.
Photosensitive
surface
0.45
Lead
2.5 ± 0.2
Case
KIRDA0150EC
3