G1126-02 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – GaAsP photodiode

GaAsP photodiode G1126-02, G1127-02, G2119
sShunt resistance vs. ambient temperature
10 TΩ
(Typ. VR=10 mV)
1 TΩ
100 GΩ
10 GΩ
G1126-02
G1127-02
1 GΩ
100 MΩ
G2119
10 MΩ
-20
0
20
40
60
AMBIENT TEMPERATURE (˚C)
80
KGPDB0038EA
sShort circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
10⁰
10^-2
RL=100 Ω
10^-4
10^-6
10^-8
10^-10
10^-12
10^-14
DEPENDENT ON NEP
10^-1₁⁶_{0-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100}
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
sDimensional outlines (unit: mm)
➀ G1126-02
WINDOW
5.9 ± 0.1
9.1 ± 0.2
8.1 ± 0.1
➁ G1127-02
WINDOW
10.5 ± 0.1
13.9 ± 0.2
12.35 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.08 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
7.5 ± 0.2
MARK ( 1.4)
CONNECTED
TO CASE
KGPDA0006EA
CONNECTED
TO CASE
KGPDA0007EA