S9970-0906_15 Datasheet, PDF (2/11 Pages) Hamamatsu Corporation – CCD area image sensor

CCD area image sensor S9970/S9971 series
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Min.
Operating temperature
Topr
-50
Storage temperature
Tstg
-50
Output transistor drain voltage
VOD
-0.5
Reset drain voltage
VRD
-0.5
Test point (vertical input source)
VISV
-0.5
Test point (horizontal input source)
VISH
-0.5
Test point (vertical input gate)
VIG1V, VIG2V
-15
Test point (horizontal input gate)
VIG1H, VIG2H
-15
Summing gate voltage
VSG
-15
Output gate voltage
VOG
-15
Reset gate voltage
VRG
-15
Transfer gate voltage
VTG
-15
Vertical shift register clock voltage
VP1V, VP2V
-15
Horizontal shift register clock voltage
VP1H, VP2H
-15
s Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
Output transistor drain voltage
VOD
Reset drain voltage
VRD
Output gate voltage
VOG
Substrate voltage
VSS
Test point (vertical input source)
VISV
Test point (horizontal input source)
VISH
Test point (vertical input gate)
VIG1V, VIG2V
Test point (horizontal input gate)
VIG1H, VIG2H
Vertical shift register
High
VP1VH, VP2VH
clock voltage
Low
VP1VL, VP2VL
Horizontal shift register
High
VP1HH, VP2HH
clock voltage
Low
VP1HL, VP2HL
Summing gate voltage
High
Low
VSGH
VSGL
Reset gate voltage
High
Low
VRGH
VRGL
Transfer gate voltage
High
Low
VTGH
VTGL
External load resistance
RL
Min.
18
11.5
1
-
-
-
-8
-8
0
-9
0
-9
0
-9
0
-9
0
-9
20
s Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Signal output frequency
fc
-
S9970/S9971-0906
-
Vertical shift register
capacitance
S9970/S9971-1006
S9970/S9971-1007
CP1V, CP2V
-
-
S9970/S9971-1008
-
S9970/S9971-0906
-
Horizontal shift register
capacitance
S9970/S9971-1006
S9970/S9971-1007
CP1H, CP2H
-
-
S9970/S9971-1008
-
Summing gate capacitance
CSG
-
Reset gate capacitance
CRG
-
S9970/S9971-0906
-
Transfer gate
capacitance
S9970/S9971-1006
S9970/S9971-1007
CTG
-
-
S9970/S9971-1008
-
Transfer efficiency*²
CTE
0.99995
DC output level
Vout
12
Output impedance
Zo
-
Power dissipation*³
P
-
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity
*3: Power dissipation of the on-chip amplifier plus load resistance
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
20
12
3
0
VRD
VRD
0
0
4
-8
4
-8
4
-8
4
-8
4
-8
22
Typ.
0.1
750
1500
3000
6000
100
180
180
180
7
7
60
100
100
100
0.99999
15
5
15
Max.
+50
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Max.
22
12.5
5
-
-
-
-
-
6
-7
6
-7
6
-7
6
-7
6
-7
24
Max.
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
-
-
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
kΩ
Unit
MHz
pF
pF
pF
pF
pF
-
V
kΩ
mW