S9840 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – High UV sensitivity CCD image sensor

CCD image sensor S9840
s Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
Output transistor drain voltage
VOD
Reset drain voltage
VRD
Over flow drain voltage
VOFD
Output gate voltage
VOG
Substrate voltage
VSS
Test point (input source)
VISH
Test point (input gate)
VIGH
Vertical shift register
High
VP1VH, VP2VH
clock voltage
Low
VP1VL, VP2VL
Horizontal shift register
High
VP1HH, VP2HH
clock voltage
Low
VP1HL, VP2HL
Over flow gate voltage
High
Low
VOFGH
VOFGL
Summing gate voltage
High
Low
VSGH
VSGL
Reset gate voltage
High
Low
VRGH
VRGL
Transfer gate voltage
High
Low
VTGH
VTGL
Min.
18
11.5
11.5
1
-
-
-8
4
-9
4
-9
4
-9
4
-9
4
-9
4
-9
s Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Vertical shift register capacitance
CP1V, CP2V
-
Horizontal shift register capacitance
CP1H CP2H
-
Summing gate capacitance
CSG
-
Reset gate capacitance
CRG
-
Transfer gate capacitance
CTG
-
s Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Saturation output voltage
Vsat
-
Full well capacity
Fw
-
CCD node sensitivity
Sv
-
Dark current *¹
DS
-
Readout noise *²
Nr
-
Readout speed
fc
-
Dynamic range *³
DR
-
Spectral response range
λ
-
Photo response non-uniformity *⁴
PRNU
-
*1: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*2: At 2 MHz readout.
*3: Dynamic range (DR) = Full well/Readout noise
*4: Measured at the half of the full well capacity output.
Fixed pattern noise (peak to peak)
PRNU =
× 100 [%]
Signal
Typ.
20
12
12
3
0
VRD
0
6
-8
6
-8
6
-8
6
-8
6
-8
6
-8
Typ.
300
160
5
10
60
Typ.
Fw × Sv
130
4.0
40
25
-
5200
200 to 1100
±3
Max.
Unit
22
V
12.5
V
12.5
V
5
V
-
V
-
V
-
V
8
-7
V
8
-7
V
8
-7
V
8
-7
V
8
-7
V
8
-7
V
Max.
Unit
-
pF
-
pF
-
pF
-
pF
-
pF
Max.
-
-
-
120
30
5
-
-
±10
Unit
V
ke^-
µV/e^-
pA/cm²
e^- rms
MHz
-
nm
%
2