S9684 Datasheet, PDF (2/2 Pages) Hamamatsu Corporation – Photo IC for laser beam synchronous detection

Photo IC for laser beam synchronous detection S9684 series
s Block diagram
CURRENT
AMPLIFIER
PD2
Vref
CURRENT
AMPLIFIER
PD1
Vcc
0.1 µF
5V
Ro2
EXTERNAL
GAIN RESISTANCE
Ro2
Ro1
EXTERNAL
GAIN RESISTANCE
Ro1
Vo
GND
s Output waveforms of terminals 2, 3 and 5
PD1 PD2
SCANNING
DIRECTION
RO1
RO2
VO
KPICC0108EA
KPICC0131EA
s Function
S9684 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. S9684 series should be used with terminals Ro1 and Ro2 connected to
an external gain resistance.
Two photocurrents are generated when a laser beam enters the dual-element photodiode. Each photocurrent is fed to the input
terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages
VRO1 and VRO2 at terminals Ro1 and Ro2 are given by the following expression.
VRO1 (VRO2)=A × S × PI × Ro1 (Ro2) [V]
A: Current amplifier gain (S9684: 20 times, S9684-01: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.45 A/W at 780 nm)
PI: Input power [W]
Ro1, Ro2: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO1 and VRO2 are input to the internal comparator so the output Vo is “High” when VRO1 > VRO2 or “Low” when VRO1 < VRO2.
We recommend using S9684 series under the operating conditions that VRO1 and VRO2 are 2 to 3 V.
s Dimensional outline (unit: mm)
3.2 ± 0.2
(INCLUDING BURR) _{0.67 (CENTER OF}
ACTIVE AREA)
0.8
PHOTOSENSITIVE
SURFACE
0.5 0.3
0.5
0.3
1.0 ± 0.4
3.0 *
1.0 ± 0.4
0.05
PD2 PD1
0.45 ± 0.3
5.0 ± 0.3
3.0 *
2.8
2.4
MIRROR AREA
RANGE
0.45 ± 0.3
PHOTOSENSITIVE
SURFACE
0.27
0.75
1.3
Tolerance unless otherwise noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2
DETAILS OF
PHOTODIODE
2.9
3.0 *
Vcc
Ro1
OUT
GND
Ro2
GND
GND
GND
GND
GND
KPICA0056EB
KPICA00
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
2
Cat. No. KPIC1056E04
Aug. 2007 DN