S9295_15 Datasheet, PDF (2/7 Pages) Hamamatsu Corporation – Si photodiodes with preamp

Si photodiodes with preamp
S9295 series
Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 MΩ)
Parameter
Symbol
Condition
S9295
Td=-25 °C
Spectral response range
λ
Peak sensitivity wavelength
λp
Feedback resistance (built-in)*³
Rf
Photosensitivity
S
λ=200 nm
λ=λp
Output noise voltage
Vn
Dark state, f=10 Hz
20
Noise equivalent power
NEP
λ=λp, f=10 Hz
4
Output offset voltage
Vos
Dark state
Cutoff frequency
fc
-3 dB
190
Output voltage swing
Vo
Supply current
Icc
Dark state
Thermistor resistance
Rth
86
*3: Custom devices are available with different Rf values and/or internal Cf, etc.
190 to 1100
960
10
0.9
5.1
±2
13
0.3
S9295-01
Td=-5 °C
25
5
180
30
Unit
nm
nm
GΩ
V/nW
μV rms/Hz^1/2
fW/Hz^1/2
mV
Hz
V
mA
kΩ
Spectral response
6
(Typ. Vcc=±15 V)
5
4
3
S9295 (Td=-25 °C)
2
S9295-01 (Td=-5 °C)
1
0
200
400
600
800
1000
Wavelength (nm)
KSPDB0228EA
Frequency response
10
(Typ. Vcc=±15 V)
S9295
(Td=-25 °C)
0
-10
-20
-30
10
S9295-01
(Td=-5 °C)
100
1000
Frequency (Hz)
10000
KSPDB0229EA
2