S9066-111 Datasheet, PDF (2/2 Pages) Hamamatsu Corporation – Photo IC diode Spectral response close to human eye sensitivity

Photo IC diode S9066-111, S9067-101
s Spectral response
(Typ. Ta=25 ˚C, VR=5 V)
1.0
0.9
HUMAN EYE
0.8
SENSITIVITY
0.7
0.6
0.5
S9066-111
0.4
S9067-101
0.3
0.2
0.1
0
200
400
600
800
1000 1200
s Linearity (S9066-111)
10 mA
(Typ. Ta=25 ˚C, VR=5 V, 2856 K)
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
0.1
1
10
100
1000
s Dark current vs. ambient temperature
10 µA
(Typ. VR=5 V)
1 µA
100 nA
10 nA
1 nA
100 pA
0
25
50
75
100
WAVELENGTH (nm)
KPICB0078EC
ILLUMINANCE (lx)
s Rise/fall times vs. load resistance s Operating circuit example
KPICB0083EB
AMBIENT TEMPERATURE (˚C)
KPICB0076EB
1000
(Typ. Ta=25 ˚C, VR=7.5 V, λ=560 nm, Vo=2.5 V)
100
tr
10
tf
1
0.1
100
1k
10 k
100 k
1M
PHOTODIODE
FOR SIGNAL OFFSET
CATHODE
PHOTODIODE
FOR SIGNAL DETECTION
THE DRAWING SURROUNDED
BY THE DOTTED LINE SHOWS
A SCHEMATIC DIAGRAM OF
THE PHOTO IC.
CURRENT AMP
(APPROX. 30000 times)
INTERNAL PROTECTION
9 ^RESISTANCE
(APPROX. 150 )
REVERSE BIAS
POWER SUPPLY
ANODE
Vout
CL
RL
The photo IC diode must be reverse-
biased so that a positive potential
is applied to the cathode.
To eliminate high-frequency
components, we recommend
placing a load capacitance CL in
parallel with load resistance RL as
a low-pass filter.
Cut-off
frequency
fc
=..
1
2πCLRL
LOAD RESISTANCE (Ω)
KPICB0115EA
KPICC0091EB
s Dimensional outlines (unit: mm)
S9066-111
S9067-101
5.2 ± 0.3
(INCLUDIG BURR)
5.0
2.5 ± 0.2
CENTER OF ACTIVE AREA
ACTIVE AREA 0.46 × 0.32
2.0
1.0
3.2 ± 0.2
0.4
0.4
0.13
(4 ×) 0.5
(2 ×) 1.0
(DEPTH 0.15)
(4 ×) 0.55
(4 ×) 0.45
2.0 (DEPTH 0.15)
CENTER OF ACTIVE AREA
ACTIVE AREA 0.32 × 0.46
PHOTOSENSITIVE
SURFACE
2.0 ± 0.1
1.27 1.27 1.27
(SPECIFIED AT THE LEAD ROOT)
PHOTOSENSITIVE
SURFACE
10˚
10˚
5˚
5˚
0.25
+0.15
-0.1
ANODE
(ANODE)
NC
CATHODE
Tolerance unless otherwise
noted: ±0.1, ±2˚
Shaded area indicates burr.
Values in parentheses indicate
reference value.
CATHODE
ANODE
Tolerance unless otherwise
noted: ±0.2
Active area position accuracy: X, Y£±0.3
Electrodes
2.2
KPICA0050EE
KPICA0051EC
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Cat. No. KPIC1052E05
2
Feb. 2008 DN