S8980 Datasheet, PDF (2/7 Pages) Hamamatsu Corporation – Front-illuminated FFT-CCDs for X-ray imaging

CCD area image sensor S8980, S8981-02
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Storage temperature
Tstg
-20
-
+70
°C
Operating temperature
Topr
0
-
+40
°C
OD voltage
VOD
-0.5
-
+20
V
RD voltage
VRD
-0.5
-
+18
V
SG voltage
VSG
-15
-
+15
V
OG voltage
VOG
-15
-
+15
V
RG voltage
VRG
-15
-
+15
V
TG voltage
VTG
-15
-
+15
V
Vertical clock voltage
VP1V, VP2V
-15
-
+15
V
Horizontal clock voltage
VP1H, VP2H
-15
-
+15
V
Vcc voltage
Vcc
0
-
+7
V
s Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output transistor drain voltage
VOD
12
15
-
V
Reset drain voltage
VRD
12
13
14
V
Output gate voltage
VOG
-0.5
2
5
V
Substrate voltage
Vss
-
0
-
V
Vertical shift register
High
VP1VH, VP2VH
0
3
6
V
clock voltage
Low
VP1VL, VP2VL
-9
-8
-7
V
Horizontal shift register
High
VP1HH, VP2HH
0
3
6
V
clock voltage
Low
VP1HL, VP2HL
-9
-8
-7
V
Summing gate voltage
High
Low
VsGH
VsGL
0
-9
3
-8
6
-7
V
V
Reset gate voltage
High
VRGH
0
3
6
Low
VRGL
-9
-8
-7
V
V
Transfer gate voltage
High
Low
VTGH
VTGL
0
-9
3
-8
6
-7
V
V
+5 V power supply voltage
Vcc
4.75
5
5.25
V
s Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Signal output frequency
fc
*¹
-
1
5
Vertical shift register capacitance
CP1v, CP2v
-
60,000
-
Horizontal shift
register capacitance
S8980
S8981-02
CP1H, CP2H
-
350
-
-
550
-
Summing gate capacitance
S8980
S8981-02
CsG
-
20
-
-
220
-
Reset gate capacitance
S8980
S8981-02
CRG
-
20
-
-
220
-
Transfer gate capacitance
S8980
S8981-02
CTG
-
250
-
-
450
-
Charge transfer efficiency
CTE
*²
0.99995 0.99998
-
DC output level
VOut
*³
5
8
11
Output impedance
Zo
*³
-
500
-
Power dissipation
P
*³ *⁴
-
75
-
+5 V power supply current
S8980
S8981-02
Icc
-
1
-
-
2
-
*1: S8980 only. In case of S8981-02, maximum frequency is strongly depend on peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: VOD=15 V
*4: Power dissipation of the on-chip amplifier.
Unit
MHz
pF
pF
pF
pF
pF
-
V
Ω
mW
mA
2