S8745-01_15 Datasheet, PDF (2/7 Pages) Hamamatsu Corporation – Si photodiodes with preamp

Si photodiodes with preamp
S8745-01, S8746-01
Electrical and optical characteristics (Typ. Ta=25 °C, Vcc=±15 V, RL=1 MΩ, unless otherwise noted)
Parameter
Spectral response range
Peak sensitivity wavelength
Feedback resistance (built-in)
Feedback capacitance (built-in)
Photosensitivity
Output noise voltage
Noise equivalent power
Output offset voltage
Cutoff frequency
Output voltage swing
Supply current
Symbol
λ
λp
Rf
Cf
S
Vn
NEP
Vos
fc
Vo
Icc
Condition
λ=200 nm
λ=λp
Dark state, f=10 Hz
Dark state, f=20 Hz
λ=λp, f=10 Hz
λ=λp, f=20 Hz
Dark state
-3 dB
Dark state
S8745-01
S8746-01
190 to 1100
960
1
5
0.12
0.52
6
7
5
6
11
15
11
15
±4
32
13
0.3
Unit
nm
nm
GΩ
pF
V/nW
μV rms/Hz^1/2
fW/Hz^1/2
mV
Hz
V
mA
[Figure 1] Spectral response
[Typ.Ta=25 °C, Rf=1 GΩ (built-in), Cf=5 pF (built-in)]
0.6
0.5
0.4
0.3
0.2
0.1
0
190
400
600
800
1000 1200
Wavelength (nm)
KSPDB0232EA
The built-in feedback resistance and capacitance of the S8745-01 and S8746-01 are 1 GΩ and 5 pF, respectively. This combination pro-
vides a sensitivity of about 0.1 to 0.5 V/nW in the wavelength range of 190 to 1100 nm.
2