S7033 Datasheet, PDF (2/8 Pages) Hamamatsu Corporation – CCD area image sensor

CCD area image sensor S7033/S7034 series
s Absolute m axim um ratings (Ta=25 °C )
Param eter
Operating tem perature
Storage tem perature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Sym bol
Topr
Tstg
VOD
VRD
V ISV
V ISH
V IG 1V, V IG 2V
V IG 1H, V IG 2H
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
M in .
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
s O perating conditions (M PP m ode, Ta=25 °C )
Param eter
Sym bol
Output transistor drain voltage
VOD
Reset drain voltage
VRD
Output gate voltage
VOG
Substrate voltage
VSS
Test point (vertical input source)
V ISV
Test point (horizontal input source)
V ISH
Test point (vertical input gate)
V IG 1V, V IG 2V
Test point (horizontal input gate)
V IG 1H, V IG 2H
Vertical shift register
H ig h
VP1VH, VP2VH
clock voltage
Low
VP1VL, VP2VL
Horizontal shift register
H ig h
VP1HH, VP2HH
clock voltage
Low
VP1HL, VP2HL
Sum m ing gate voltage
H ig h
Low
VSGH
VSGL
Reset gate voltage
H ig h
Low
VRGH
VRGL
Transfer gate voltage
H ig h
Low
VTGH
VTGL
M in .
18
11.5
1
-
-
-
-8
-8
4
-9
4
-9
4
-9
4
-9
4
-9
Typ.
20
12
3
0
VRD
VRD
0
0
6
-8
6
-8
6
-8
6
-8
6
-8
s E lectrical characteristics (Ta=25 °C )
Param eter
Sym bol
M in .
Typ.
Signal output frequency
fc
-
-
Charge transfer efficiency *²
CTE
0.99995
0.99999
DC output level *³
Vout
12
15
O utput im pedance *³
Zo
-
3
Power consum ption *³ *⁴
P
-
15
*2 : C h a rg e tra n s fe r e ffic ie n c y p e r p ixe l, m e a s u re d a t h a lf o f th e fu ll w e ll c a p a c ity.
*3: The values depend on the load resistance. (Typical, V OD=20 V, Load resistanc e=22 kΩ )
*4 : P o w e r c o n s u m p tio n o f th e o n -c h ip a m p lifie r.
s E lectrical and optica l characteristics (Ta=25 °C , unless otherw ise noted)
Param eter
Sym bol
M in .
Saturation output voltage
Vsat
-
Full well capacity
V e rtic a l
H o rizo n ta l
Fw
150,000
1,350,000
CCD node sensitivity
Sv
0.5
Dark current *⁵
(MPP m ode)
25 °C
0 °C
-
DS
-
Readout noise *⁶
Nr
-
Dynam ic range *⁷
Line binning
Area scanning
Photo response non-uniform ity *⁸
DR
PRNU
22,500
2,500
-
Spectral response range
λ
-
*5: Dark current nearly doubles for every 5 to 7 °C increase in tem perature.
*6: O perating frequency is 150 kHz.
*7: Dynam ic range (DR )=Full well/Readout noise.
*8: Measured at the half of the full well capacity output.
Typ.
Fw × Sv
300,000
2,700,000
0.6
4,000
200
30
90,000
10,000
±3
200 to 1100
Fixed pattern noise (peak to peak)
Photo response non-uniformity (PRNU) [%]
× 100
Signal
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Max.
22
12.5
5
-
-
-
-
-
8
-7
8
-7
8
-7
8
-7
8
-7
M a x.
1
-
18
-
-
M a x.
-
-
-
-
12,000
600
-
-
-
±10
-
U n it
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
U n it
V
V
V
V
V
V
V
V
V
V
V
V
V
U n it
MHz
-
V
kΩ
mW
U n it
V
e^-
µ V /e ^-
e ^-/p ixe l/s
e^- rm s
-
%
nm
2