S12426_15 Datasheet, PDF (2/5 Pages) Hamamatsu Corporation – Low bias operation, high-speed Si APD for 900 nm

Si APD
S12426 series
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Quantum efficiency
Breakdown voltage
Temp. coefficient of VBR
Dark current
Temp. coefficient of ID
Cutoff frequency
Rise time
Terminal capacitance
Excess noise figure
Gain
Symbol
λ
λp
S
QE
VBR
ΔTVBR
ID
ΔTID
fc
tr
Ct
x
M
Condition
M=100
λ=900 nm, M=1
λ=900 nm, M=1
ID=100 μA
M=100
λ=900 nm, M=100
M=100, RL=50 Ω
λ=900 nm, -3 dB
M=100, RL=50 Ω
λ=900 nm, 10% to 90%
M=100, f=1 MHz
M=100, λ=900 nm
λ=900 nm
S12426-02
Min. Typ. Max.
400 to 1150
-
840
-
- 0.52 -
-
70
-
120 160 200
-
1.1
-
-
0.1
1
-
1.1
-
-
650
-
- 0.55 -
-
0.5
-
-
0.3
-
-
100
-
S12426-05
Min. Typ. Max.
400 to 1150
-
840
-
-
0.52
-
-
70
-
120 160 200
-
1.1
-
-
0.2
2
-
1.1
-
-
600
-
-
0.6
-
-
1.1
-
-
0.3
-
-
100
-
Unit
nm
nm
A/W
%
V
V/°C
nA
times/°C
MHz
ns
pF
-
-
Spectral response
(Typ. Ta=25 °C, M=100 at 900 nm)
60
50
40
30
20
10
0
400
600
800
1000
Wavelength (nm)
1200
KAPDB0269EA
Quantum efficiency vs. wavelength
(Typ. Ta=25 °C)
100
90
80
70
60
50
40
30
20
10
0
400
600
800
1000
1200
Wavelength (nm)
KAPDB0277EA
2