S1226 Datasheet, PDF (2/3 Pages) Hamamatsu Corporation – Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

s Spectral response
0.7
(Typ. Ta =25 ˚C)
0.6
0.5
0.4
0.3 S1226-BQ
0.2
0.1
0
190
S1226-BK
400
600
800
WAVELENGTH (nm)
1000
KSPDB0106EA
s Rise time vs. load resistance
1 ms
(Typ. Ta=25 ˚C, VR=0 V)
100 µs
10 µs
S1226-8BQ/BK
S1226-44BQ/BK
1 µs
100 ns
10 ns
10²
S1226-18BQ/BK
S1226-5BQ/BK
10³
10⁴
10⁵
LOAD RESISTANCE (Ω)
KSPDB0107EA
s Shunt resistance vs. ambient temperature
1 TΩ
(Typ. VR=10 mV)
100 GΩ
S1226-18BQ/BK, -5BQ/BK
10 GΩ
1 GΩ
S1226-44BQ/BK
100 MΩ
10 MΩ
1 MΩ
S1226-8BQ/BK
100 kΩ
10 kΩ_-20
0
20
40
60
80
AMBIENT TEMPERATURE (˚C)
KSPDB0109EA
Si photodiode S1226 series
s Photo sensitivity temperature characteristic
(Typ. )
+1.5
+1.0
+0.5
0
-0.5
190
400
600
800
WAVELENGTH (nm)
1000
KSPDB0030EA
s Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
100 pA
10 pA
S1226-8BQ/BK
S1226-44BQ/BK
1 pA
100 fA
0.01
S1226-5BQ/BK
S1226-18BQ/BK
0.1
1
DARK CURRENT
10
KSPDB0108EB
2