S12023_15 Datasheet, PDF (2/6 Pages) Hamamatsu Corporation – Low bias operation, for 800 nm band

Si APD
S12023 series, etc.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
Spectral
response
range
λ
Peak*⁴
sensitivity
wavelength
λp
Photo-
sensitivity
S
M=1
λ=800 nm
Quantum
efficiency
QE
M=1
λ=800 nm
Breakdown
voltage
VBR
ID=100 μA
Typ. Max.
Temp.
co-
efficient
of VBR
Dark*⁴
current
ID
Cutoff*⁴
frequency
fc
RL=50 Ω
Terminal*⁴
capacitance
Ct
Excess*⁴
noise Gain
figure
M
x λ=800 nm
Typ. Max.
λ=800 nm
(nm) (nm) (A/W)
(%)
(V) (V) (V/°C) (nA) (nA) (MHz) (pF)
S12023-02
0.05 0.5 1000
1
S12023-05
S12051
0.1 1
900
2
S12086
S12023-10
S12023-10A*³
400 to
1000
800
0.5
100
75
150 200 0.65 _{0.2 2}
600
6
0.3
S3884
0.5 5
400
10
S2384
1 10 120
40
60
S2385
3 30
40
95
40
*4: Values measured at a gain listed in the characteristics table
Note: Breakdown voltage can be specified by using the suffix of type number as examples shown below.
S12023-02-01: 80 to 120 V
S12023-02-02: 120 to 160 V
S12023-02-03: 160 to 200 V
Spectral response
(Typ. Ta=25 °C, M at 800 nm)
60
M=100
50
40
30
M=50
20
10
0
200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
KAPDB0020EB
Quantum efficiency vs. wavelength
(Typ. Ta=25 °C)
100
80
60
40
20
0
200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
KAPDB0021EA
2