S11151-2048_15 Datasheet, PDF (2/6 Pages) Hamamatsu Corporation – CCD linear image sensor

CCD linear image sensor
S11151-2048
Operating conditions (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output transistor drain voltage
VOD
12
13
14
V
Reset drain voltage
VRD
10.5
11
11.5
V
Vertical input source voltage
VISV
-
VRD
-
V
Test point
Horizontal input source voltage
VISH
-
VRD
Vertical input gate voltage
VIGV
-5
-4
-
V
-
V
Horizontal input gate voltage
VIGH
-5
-4
-
V
Summing gate voltage
High
VSGH
4
5
6
V
Low
VSGL
-5
-4
-3
Output gate voltage
VOG
2
3
4
V
Substrate voltage
VSS
-
0
-
V
Reset gate voltage
High
VRGH
4
Low
VRGL
-5
5
-4
6
V
-3
Transfer gate voltage
High
VTGH
7
8
9
V
Low
VTGL
-5
-4
-3
Horizontal shift register clock voltage ^High
VP1HH, VP2HH
4
5
6
V
Low
VP1HL, VP2HL
-5
-4
-3
External load resistance
RL
2.0
2.2
2.4
kΩ
Electrical characteristics (Ta=25 °C, unless otherwise noted, operating conditions: Typ.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Signal output frequency*⁴
fc
-
1
5
MHz
Line rate
LR
-
0.48
2.37
kHz
Horizontal shift register capacitance
CP1H, CP2H
-
220
-
pF
Summing gate capacitance
CSG
-
10
-
pF
Reset gate capacitance
CRG
-
10
-
pF
Transfer gate capacitance
Charge transfer efficiency*⁵
CTG
-
110
-
pF
CTE
0.99995
0.99999
-
-
DC output level*⁴
Vout
-
8.5
-
V
Output impedance*⁴
Power consumption*⁴ *⁶
Zo
-
220
-
Ω
P
-
65
-
mW
*4: The value depends on the load resistance.
*5: Charge transfer efficiency per pixel of CCD shift register, measured at half of the full well capacity
*6: Power consumption of the on-chip amplifier plus load resistance
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, operating conditions: Typ.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
-
Fw × Sv
-
V
Full well capacity
Fw
150
200
-
ke^-
CCD node sensitivity
Sv
5
6
7
μV/e^-
-
Average of all effective pixels
DSave
Dark current*⁷
-
-
Maximum of all effective pixels
DSmax
-
700
4
3500
20
3500
20
17500
100
e^-/pixel/s
pA/cm²
e^-/pixel/s
pA/cm²
Readout noise*⁸
Nr
-
25
50
e^- rms
Dynamic range*⁹
DR
3000
8000
-
-
Spectral response range
λ
-
200 to 1000
-
nm
Photoresponse nonuniformity*¹⁰ *¹¹
PRNU
-
±3
±10
%
Image lag*¹⁰
L
-
0.1
1
%
*7: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.
*8: Readout frequency 1 MHz
*9: Dynamic range = Full well capacity / Readout noise
*10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
*11: Photoresponse nonuniformity = ^{Fixed pattern noise (peak to peak)} × 100 [%]
Signal
2