S10317 Datasheet, PDF (2/2 Pages) Hamamatsu Corporation – Photo IC for laser beam synchronous detection Low voltage operation (3.3 V)

Photo IC for laser beam synchronous detection S10317 series
s Block diagram
Vcc
Vref
0.1 µF
3.3 V
CURRENT
AMPLIFIER
PD
Vo
Ro
GND
EXTERNAL
GAIN RESISTANCE
Ro
KPICC0127EA
s Function
S10317 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. S10317 series should be used with terminal Ro connected to an external
gain resistance Ro.
A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and,
after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is
given by the following expression.
VRO=A × S × PI × Ro [V] ·········· (1)
A: Current amplifier gain (S10317: 20 times, S10317-01: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)
PI: Input power [W]
Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 0.8 V) so the output Vo is
“High” when VRO < Vref or “Low” when VRO > Vref.
In equatin (1), set the Ro value so that VRO is 2 to 3 V.
(Monitoring VRO shows that it is limited to about 2 V (with respect to GND) by the voltage limiting circuit. Keep this in mind when
monitoring.)
s Dimensional outline (unit: mm)
3.2 ± 0.2
(INCLUDING BURR)
0.66
CENTER OF
ACTIVE AREA
0.5
PHOTOSENSITIVE
SURFACE
1.0 ± 0.4
0.45 ± 0.3
3.0 *
5.0 ± 0.3
3.0 *
2.8
2.4
MIRROR AREA
RANGE
2.9
3.0 *
1.0 ± 0.4
0.05
0.35
0.45 ± 0.3
0.75
1.3
PHOTOSENSITIVE
SURFACE
Tolerance unless otherwise noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤±0.2, θ≤±2˚
Vcc
NC
OUT
GND
Ro
GND
GND
GND
GND
KPICA0070EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Cat. No. KPIC1067E02
2
Aug. 2007 DN