G9494-256D_15 Datasheet, PDF (2/8 Pages) Hamamatsu Corporation – Near infrared image sensors (0.9 to 1.7 m) with high-speed data rate

InGaAs linear image sensors
G9494-256D/-512D
Details of photosensitive area (unit: μm)
Block diagram
CLK
Reset
Vdd Vss INP Vref Cf_select
x
H
Number of pixels x H V
256
30 50 50
512
10 25 25
KMIRC0077EA
Timing generator
Bias generator
Shift register
Address switch
Charge amp + sample-and-hold circuit
Readout circuit
CMOS IC
AD_trig
Video
InGaAs photodiode array
KMIRC0081EA
Absolute maximum ratings
Parameter
Symbol
Condition
Value
Unit
Operating temperature
Topr
Chip temperature, No dew condensation*¹
-20 to +70
°C
Storage temperature
Tstg
Chip temperature, No dew condensation*¹
-20 to +85
°C
Soldering conditions
-
260 °C, less than five seconds
-
Supply voltage
Vdd, INP, Vref Ta=25 °C
-0.3 to +6
V
Clock pulse voltage
Vφ
Ta=25 °C
-0.3 to +6
V
Reset pulse voltage
V(RES) Ta=25 °C
-0.3 to +6
V
Gain selection terminal voltage
Vcsel Ta=25 °C
-0.3 to +6
V
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew
condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and
reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Recommended terminal voltage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Vdd
4.5
5
5.5
V
Vref
-
1.26
-
V
Element bias
INP
3.3
3.5
3.6
V
Ground
Vss
-
0
-
V
Clock pulse voltage
High
Low
Vφ
4.5
-
5.0
0
5.5
0.4
V
Reset pulse voltage
High
Low
V(RES)
4.5
0
5.0
0
5.5
0.4
V
2