G8422_06 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

InGaAs PIN photodiode G8422/G8372/G5852 series
s Spectral response
1.4
1.2
(Typ.)
T=25 ˚C
1.0
0.8
0.6
0.4
T= -20 ˚C
0.2
T= -10 ˚C
0
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
WAVELENGTH (µm)
KIRDB0226EA
s Photo sensitivity temperature characteristic
(Typ.)
2
1
0
-1
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
WAVELENGTH (µm)
KIRDB0207EA
s Dark current vs. reverse voltage
100 µA
Non-cooled type
(Typ. Ta=25 ˚C)
TE-cooled type
1 µA
(Typ.)
10 µA
G8372-03
100 nA
G5852-13 (T= -10 ˚C)
G5852-23 (T= -20 ˚C)
1 µA
G8372-01
100 nA
G8422-05
G8422-03
10 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0235EA
s Terminal capacitance vs. reverse voltage
10 nF
1 nF
100 pF
(Typ. Ta=25 ˚C, f=1 MHz)
G8372-03
G5852-13/-23
G8372-01
G5852-11/-21
10 pF
1 pF
0.01
G8422-05
G8422-03
G5852-103/-203
0.1
1
REVERSE VOLTAGE (V)
10
KIRDB0236EA
2
10 nA
1 nA
G5852-11 (T= -10 ˚C)
G5852-21 (T= -20 ˚C)
G5852-103 (T= -10 ˚C)
G5852-203 (T= -20 ˚C)
100 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0228EA
s Shunt resistance vs. element temperature
10 MΩ
1 MΩ
100 kΩ
(Typ. VR=10 mV)
G8422-03
G5852-103/-203
G8422-05
G8372-01
G5852-11/-21
10 kΩ
1 kΩ
G8372-03
G5852-13/-23
100 Ω
-40 -20 0 20 40 60 80 90 100
ELEMENT TEMPERATURE (˚C)
KIRDB0237EA