G10768_15 Datasheet, PDF (2/7 Pages) Hamamatsu Corporation – Near infrared image sensor (0.9 to 1.7 m) with 1024 pixels and high-speed line rate

InGaAs linear image sensors
G10768 series
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Vdd
4.7
5.0
5.3
V
Supply current
Ivdd
-
100
150
mA
Sample and hold voltage 1
Vref1
-
2.5
-
V
Sample and hold current 1
Iref1
-
-
1
mA
Sample and hold voltage 2
Vref2
-
2.5
-
V
Sample and hold current 2
Iref2
-
-
1
mA
Output reset voltage
Vref3
-
2.5
-
V
Output reset current
Iref3
-
-
1
mA
Element bias
Supply voltage
INP
Supply current
-
3.3
-
3.5
-
3.6
V
1
mA
Ground
Vss
-
0
-
V
Clock frequency
-
0.5
5.0
6.67
MHz
Clock pulse voltage
High
Low
Vφ
4.7
-
5
0
5.3
V
0.4
V
Reset pulse voltage
High
Low
V(RES)
4.7
-
5
0
5.3
V
0.4
V
Video output voltage
Vout+
Vout-
High
Low
High
Low
Vout+(high)
Vout+(low)
Vout-(high)
Vout-(low)
-
-
-
-
4
2.5
2.5
1
-
-
V
-
-
V
Video data rate
fv
-
f
-
Hz
Specification (Ta=25 °C, fv=5MHz, Vdd=5 V, INP=3.5 V, Vref1=Vref2=Vref3=2.5 V, CE=1400 nV/e-, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Peak sensitivity wavelength
λp
-
1.55
-
μm
Saturation charge
Qsat
Vφ=5 V
-
0.25
-
pC
Dark current
ID
-5
±1
+5
pA
RMS noise voltage (readout noise)
Standard deviation
N
Sample number 1000
-
2
6
mV rms
Integration time 30 μs
Saturation voltage amplitude
Defective pixel *¹
Vsat
-
2.5
-
V
-
CE *²=1400 nV/e-
(worst-case condition)
-
-
1
%
*1: Pixels with dark current or RMS noise voltage higher than the maximum value.
*2: Conversion efficiency
Selection logic of conversion efficiency
Parameter
Symbol
Typ.
Cfa
Cfb
Cfc
1400 nV/e-
H
L
L
Conversion efficiency
CE
280 nV/e-
70 nV/e-
H
H
H
L
L
H
14 nV/e-
H
H
H
Note: L=0 V (Vss), H=5 V (Vdd)
2