C7027_07 Datasheet, PDF (2/7 Pages) Hamamatsu Corporation – Designed for front-illuminated CCD area image sensor

CCD multichannel detector head C7027
s Absolute maximum ratings
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage (for digital circuitry)
VD1
-0.5
-
+7
VA1+
-
-
+18
Supply voltage (for analog circuitry)
VA1-
-
-
-18
VA2
-
VD2
-
-
-
+30
+7.25
V
Supply voltage
Vp
-
-
+7.25
VF
-
-
+14
Digital input voltage
-
-
-
VD (1, 2)
Operating temperature
Storage temperature
Topr
+10
Tstg
0
-
+30 *²
°C
-
+50
*2: The maximum value may be lower, depending on the drive frequency and the number of sensor pixels.
s Electrical characteristics
(Ta=25 °C, VD1=+5 V, VA1+=+15 V, VA1-= -15 V, VA2=+24 V, VD2=+7 V, Vp=+7 V, VF=+12 V, unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Unit
Digital input
High level
Low level
VIH
+2.0
-
+5.0
V
VIL
-0.5
-
+0.8
V
CLK frequency
fCLK
-
-
1
MHz
Data video readout frequency
fv
-
-
fCLK/4
Hz
Start pulse width
tst
1/fCLK
-
-
s
Digital output
High level (Io= -6 mA)
Low level (Io=+6 mA)
VIH
+2.0
-
-
V
VIL
-
-
+0.8
V
Power supply operating conditions
Digital circuitry
VD1
+4.75
+5.0
+5.25
V
VA1+
+14.5 +15.0 +15.5
V
Analog circuitry
VA1-
-14.5
-15.0
-15.5
V
Voltage
VA2
+23.5 +24.0 +24.5
V
VD2
+6.75
+7.0
+7.25
V
Other
Vp
+6.75
+7.0
+7.25
V
VF
+11.75 +12.0 +12.75
V
VD1 (+5 VDC)
-
-
-
+200
mA
VA1+ (+15 VDC)
-
-
-
+100
mA
VA1- (-15 VDC)
-
-
-
-100
mA
Current
VA2 (+24 VDC)
-
-
-
+30
mA
VD2 (+7 VDC)
-
-
-
+30
mA
Vp (+7 VDC) Ta=25 °C
-
-
+2.0
+4.0
A
VF (+12 VDC)
-
-
+100
-
mA
s Electrical and optical characteristics
(Ta=25 °C, Ts= -50 °C, VD1=+5 V, VA1+=+15 V, VA1-= -15 V, VA2=+24 V, VD2=+7 V, Vp=+7 V, VF=+12 V)
Parameter
Symbol Min.
Typ.
Max.
Spectral response range
λ
-
200 to
1100
-
Full well capacity
Vertical
Horizontal
Fw
150000 300000
300000 600000
-
-
Conversion gain *³
Sv
-
15
-
Dark current
S7017
S7847
DS
-
0.03
0.1
-
0.3
1
Readout noise
Nr
-
15
-
Dynamic range
DR
-
75000
-
Photo response non-uniformity *⁴
PRNU
-
-
±10
*3: Including the circuit gain.
*4: Measured at 50 % of the full well capacity.
Unit
nm
e^-
µV/e^-
e^-/pixel/s
e^-rms
-
%
2