G11620_15 Datasheet, PDF (11/11 Pages) Hamamatsu Corporation – Single video line (128/256/512 pixels) near infrared image sensor (0.95 to 1.7 μm)

InGaAs linear image sensors
G11620 series (non-cooled type)
Pin connections
Terminal name Input/Output
Function and recommended connection
PDN
Input
Cathode bias terminal for InGaAs photodiode. This should be at the same potential
as INP.
AD_sp
Output Digital start signal for A/D conversion
Cf_select1, 2 Input*⁹ Signal for selecting feedback capacitance (integration capacitance) on CMOS chip
Thermistor Output Thermistor for monitoring temperature inside the package
AD_trig
Output Sampling synchronous signal for A/D conversion
RESET
Input
Reset pulse for initializing the feedback capacitance in the charge amplifier formed in
the CMOS chip. Integration time is determined by the high period of this pulse.
CLK
Input Clock pulse for operating the CMOS shift register
INP
Input
Input stage amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip. This should be at the same potential as PDN.
Vinp
Input
Video line reset voltage. Supply voltage for operating the signal processing circuit in
the CMOS chip.
Fvref
Input
Differential amplifier reference voltage. Supply voltage for operating the signal
processing circuit in the CMOS chip.
VIDEO
Output Differential amplifier output. Analog video signal.
Vdd
Input Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V)
GND
Input Grand for the signal processing circuit in the CMOS chip (0 V)
*9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below.
Conversion efficiency
16 nV/e- (Low gain)
160 nV/e- (High gain)
Cf_select1
High
High
Cf_select2
High
Low
Low: 0 V (GND), High: 5 V(Vdd)
Remark
4.0 V
0 to 5 V
0 V or 5 V
-
0 to 5 V
0 to 5 V
0 to 5 V
4.0 V
4.0 V
1.2 V
1.2 to 4.0 V
5V
0V
Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this de-
vice from surge voltages which might be caused by peripheral equipment.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensors
Information described in this material is current as of July, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone]
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North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: [phone], Fax: [phone]
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Cat. No. KMIR1019E06 Jul. 2015 DN