V6833P_V7090P_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – 18 mm Dia. PROXIMITY FOCUSED MAGE INTENSIFIER ASSEMBLY

18 mm Dia. PROXIMITY FOCUSED
IMAGE INTENSIFIER ASSEMBLY
V6833P/V6833P-G/V7090P
FEATURES
GHigh Photocathode Sensitivity (GaAs Photocathode)
GABC (Automatic Brightness Control)
GBright Source Protection
GHigh Luminous Gain
GNo Image Distortion
GCompact and Light Weight
GAuto Gating Function (V6833P-G)
APPLICATIONS
GNight Viewer
Goggle, Hand Held Scope, HMD (Head Mount Display) etc.
SPECIFICATIONS
GENERAL
Parameter
Input Voltage
Max. Input Voltage
Max. Input Current
Spectral Response
Wavelength of Peak Response
Photocathode
Material
Minimum Effective Diameter
Material
Input Window
Thickness
Index of Refraction (at 588 nm)
Stage of MCP
Phosphor Screen
Material
Minimum Effective Diameter
Output Window Material
Case Material
Weight
Operating Ambient Temperature
Operating Ambient Humidity ^A
Storage Temperature
Storage Humidity ^A
NOTE: ANo condensation
CHARACTERISTICS (at +20 °C)
Parameter
Photocathode
Sensitivity
Luminous
Radiant ^B
Quantum Efficiency ^B
Luminous Gain
EBI
Luminous
Limiting Resolution
2.5 lp/mm
MTF
7.5 lp/mm
15 lp/mm
25 lp/mm
Magnification
NOTE: BAt the wavelength of peak response
Left: V6833P, Right: V7090P
V6833P / V6833P-G / V7090P
+2 to +3
+3.5
35
370 to 920
600 to 750
GaAs
17.5
Borosilicate Glass
5.5
1.49
1
P43
17.5
V6833P / V6833P-G: Inverting Concave Fiber Optic Plate
V7090P: Straight Concave Fiber Optic Plate
POM (Polyoxymethylene)
V6833P / V6833P-G: Approx. 80 / V7090P: Approx. 85
-20 to +40
Below 70
-55 to +60
Below 70
Unit
V
V
mA
nm
nm
—
mm
—
mm
—
—
—
mm
—
—
g
°C
% RH
°C
% RH
Min.
1000
—
—
1.0 × 10⁴
—
51
—
—
—
—
0.96
Typ.
1500
170
30
4.0 × 10⁴
1.0 × 10^-11
64
92
80
61
38
—
Max.
—
—
—
—
5.0 × 10^-11
—
—
—
—
—
1.04
Unit
µA/lm
mA/W
%
(lm/m²) / lx
lm/cm²
Lp/mm
%
%
%
%
—
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.