V12841D-G130_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PROXIMITY FOCUSED IMAGE INTENSIFIER

PROXIMITY FOCUSED
IMAGE INTENSIFIER
V12841D-G130
FEATURES
GCompact and Light Weight
GHigh Photocathode Sensitivity in NIR Region
Quantum Efficiency (Typ.) ... 30 % at the wavelength of peak response
GHigh Resolution (Typ.) ......... 64 Lp/mm
GGating Operation .................. 5 ns (Minimum gate width)
APPLICATIONS
GLaser Ranging
GSurveillance Observation
GTime Resolved Low-light-level Imaging
SPECIFICATIONS
GENERAL
Parameter
Spectral Response
Wavelength of Peak Response
Photocathode
Material
Minimum Effective Area
Input Window
Material
Thickness
Stage of MCP
Phosphor Screen
Material
Minimum Effective Area
Output Window Material
Weight
Operating Ambient Temperature
Operating Ambient Humidity ^A
Storage Temperature
Storage Humidity ^A
NOTE: ANo condensation
Description / Value
Unit
370 to 920
nm
600 to 750
nm
GaAs
—
12.8 × 9.6
mm
Borosilicate Glass
—
3.0
mm
1
—
P43
—
12.8 × 9.6
mm
Fiber Optic Plate
—
31.3
g
-20 to +40
°C
Below 70
%
-55 to +60
°C
Below 70
%
CHARACTERISTICS (at +20 °C)
Parameter
Photocathode
Luminous Sensitivity
Quantum Efficiency ^B
Light Gain
Luminous Gain
EBI
Luminous
Limiting Resolution
Response Time (Gate Width)
NOTE: BAt the wavelength of peak response
Min.
1000
—
1.0 × 10⁴
—
50
5
Typ.
1500
30
4.0 × 10⁴
2.0 × 10^-11
64
—
Max.
—
—
—
5.0 × 10^-11
—
—
Unit
µA/lm
%
(lm/m²)/lx
lm/cm²
Lp/mm
ns
RATINGS
Parameter
Min.
Typ.
Max. ^D
Unit
Photocathode to MCPin ^C
150
200
230
V
Supply Voltage
MCPin to MCPout ^C
500
1000
1010
V
MCPout to Phosphor Screen ^C
5000
6000
6100
V
NOTE: CThe maximum and recommended supply voltage are noted on the test data sheet when the product is delivered. Please refer to the test data sheet for these values.
DAbsolute maximum values.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.