S9723 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode Large area Si PIN photodiode for direct detection

PHOTODIODE
Si PIN photodiode
S9723, S9724
Large area Si PIN photodiode for direct detection
S9723 and S9724 are large-area Si detectors specifically designed for the direct detection of high-energy charged particles and X-rays. These Si
detectors are mounted on PC boards with holes for the purpose of ∆E-E detection of charged particles. These detector’s thicknesses are 100 ± 5
µm (S9723) and 10 ± 2.5 µm (S9724). Thickness uniformities of the active area are as good as 2.0 µm Typ. (S9723) and 1.0 µm Typ. (S9724).
This ensures excellent sensitivity uniformity over the entire active area.
Features
l Large area
l Low dark current
l Thickness uniformity *¹ : 2 µm (S9723)
1 µm (S9724)
l Active area : 26 × 26 × 0.1 ^t mm (S9723)
10 × 10 × 0.01 ^t mm (S9724)
Applications
l Heavy ions energy detection
l X-ray detection
l ∆E-E detection
s Specifications/Absolute maximum ratings
Parameter
Symbol
S9723
S9724
Unit
Active area
-
26 × 26
10 × 10
mm
Detector thickness
-
100 ± 5
10 ± 2.5
µm
Thickness uniformity *¹
-
2.0
1.0
µm
Surface orientation
-
(111)
-
Dead layer Front side
thickness *² Rear side
-
1
1
µm
Reverse voltage
VR Max.
20
2
V
Current
-
2
mA
Operating temperature *³ Topr
0 to +60
°C
Storage temperature *³
Tstg
0 to +80
°C
*1: Variation in the detector thickness
*2: Reference value
*3: No condensation
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Condition
S9723
Min. Typ. Max.
S9724
Min. Typ. Max.
Unit
Full depletion voltage
VD
-
5
10
-
0.5
1
V
Dark current
ID VR=VD
-
2
50
-
0.01
0.1
nA
Rise time
tr
VR=VD, RL=50 Ω
-
80
-
-
100
-
ns
Terminal capacitance
Ct VR=VD, f=1 MHz
-
0.75
-
-
1
-
nF
PRELIMINARY DATA
Sep. 2004
1