S9345_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si PIN photodiode

Si PIN photodiode
S9345
Dual-element photodiode using newly devel-
oped small, thin package
The S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume
reduced to one-fifth that of similar type photodiodes using conventional package. In order to extend the detection area
when used as a reflection-mode optical switch, the entire photodiode photosensitive area of 1.5 mm wide and 5.6 mm long
is asymmetrically segmented into 2 longitudinal sections of 1.5 mm and 4.1 mm.
Features
Miniature and thin plastic package: 3.4 × 7.0 × 0.95 ^t mm
Surface mount type
Asymmetrical dual-element PIN photodiode
Photosensitive area
Photodiode A: 1.5 × 1.5 mm
Photodiode B: 1.5 × 4.1 mm
High sensitivity
Applications
Optical switches
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR max
20
V
Operating temperature
Topr
-25 to +85
°C
Storage temperature
Tstg
-40 to +100
°C
Reflow soldering conditions*¹
Tsol
Peak temperature 235 °C, 1 time (see page 3)
-
*1: JEDEC level 5a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
320 to 1100
-
nm
Peak sensitivity wavelength
λp
-
960
-
nm
Photosensitivity
S λ=780 nm
0.5
0.55
-
A/W
Short circuit ^{Photodiode A}
VR=0 V, 2856 K
-
2.6
-
current
Photodiode B
Isc _{100 lx}
-
7.1
-
μA
Dark current
ID VR=10 V, all elements
-
Terminal
Photodiode A
capacitance Photodiode B
Ct VR=10 V, f=1 MHz
-
-
0.4
5
nA
4
8
pF
10
20
Cutoff frequency
fc
VR=10 V, RL=50 Ω
λ=780 nm, -3 dB
7
15
-
MHz
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