S9251 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si APD High sensitivity in near IR range

PHOTODIODE
Si APD
S9251 series
High sensitivity in near IR range (λ=900 nm)
Features
l High sensitivity in near IR range (λ=900 nm)
l Operational stability
Applications
l Rangefinder
l Spatial light transmission
s General ratings / Absolute maximum ratings
Type No.
S9251-02
S9251-05
S9251-10
S9251-15
Dimensional
outline/
Window
material *¹
➀/K
➁/K
Package
TO-18
TO-5
Effective *²
active area size
(mm)
φ0.2
φ0.5
φ1.0
φ1.5
Effective
active area
(mm²)
0.03
0.19
0.78
1.77
Absolute maximum ratings
Operating
Storage
temperature
temperature
Topr
Tstg
(°C)
(°C)
-20 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral
response
range
λ
Peak *³
sensitivity
wavelength
λp
Photo
sensitivity
S
M=1
λ=900 nm
Quantum
efficiency
QE
M=1
λ=900 nm
Breakdown
voltage Temp
VBR coefficient
ID=100 µA of V BR
Dark *³
current
ID
C ut-off *³
frequency
fc
RL=50 Ω
Terminal *³
capacitance
Ct
Excess *³
noise
figure
x
λ=900 n m
Gain
M
λ=900 n m
Typ. Max.
Typ. Max.
(nm) (nm) (A/W)
(%) (V) (V) (V/°C) (nA) (nA) (MHz) (pF)
S9251-02
S9251-05
S9251-10
440 to
1100
860
0.52
72
250 350
1.85
0.1 1
0.2 2
0.4 4
400
380
0.4
0.7
1.9
0.3
100
S9251-15
0.8 8 350
3.6
*1: K: borosilicate glass
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
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