S9195 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode for violet-laser detection

PHOTODIODE
Si PIN photodiode
S9195
Si PIN photodiode for violet-laser detection
S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed
response is achieved despite the large active area.
Features
l High sensitivity: 0.28 A/W Typ. (λ=405 nm)
l High-speed response: 50 MHz Typ. (VR=10 V)
l Active area: 5.0 × 5.0 mm
l TO-8 metal package
Applications
l Violet-laser detection and monitor
s Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Operating temperature
Topr
Storage temperature
Tstg
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp
Photo sensitivity
S λ=405 nm
Dark current
ID
VR=10 V
Terminal capacitance
Ct VR=10 V, f=1 MHz
Cut-off frequency
fc
VR=10 V, RL=50 Ω
λ=405 nm, -3 dB
Noise equivalent power
NEP VR=10 V, λ=λp
Value
20
-40 to +100
-55 to +125
Min.
-
-
0.25
-
-
30
Typ.
320 to 1000
840
0.28
0.5
60
50
2.5 × 10^-14
Max.
-
-
-
5
80
-
-
Unit
V
°C
°C
Unit
nm
nm
A/W
nA
pF
MHz
W/Hz^1/2
1