S9055 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode Flat response characteristics up to high frequency bands

PHOTODIODE
Si PIN photodiode
S9055 series
Flat response characteristics up to high frequency bands
S9055 series Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). Their low capacitance (less than
1 pF) makes them ideal for combination with high-speed trans-impedance amplifiers.
Features
l Flat response characteristics up to high frequency bands
Frequency flatness: -0.5 dB Max.
(VR=2 V, λ=830 nm, f=100 MHz)
l High-speed response
S9055: 1.5 GHz (VR=2 V, -3 dB)
S9055-01: 2 GHz (VR=2 V, -3 dB)
l Low capacitance
S9055: 0.8 pF (VR=2 V)
S9055-01: 0.5 pF (VR=2 V)
l Highly reliable package: 3-pin TO-18 package
Applications
l Optical fiber communications
l High-speed measurement system
l Optical inter-connection
s General rating / absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
S9055
S9055-01
Unit
Active area
-
φ0.2
φ0.1
mm
Reverse voltage
VR Max.
20
V
Operating temperature
Topr
-40 to +100
°C
Storage temperature
Tstg
-55 to +125
°C
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Terminal capacitance
Cut-off frequency
Frequency flatness
λ
λp
S λ=850 nm
ID
VR=2 V
Ct VR=2 V, f=1 MHz
fc
VR=2 V, RL=25 Ω
-3dB
-
VR=2 V, λ=850 nm
f=100 MHz
S9055
Min. Typ. Max.
320 to 1000
-
700
-
0.2 0.25
-
-
1
100
-
0.8
1.2
1.0
1.5
-
-
-
-0.5
S9055-01
Min. Typ. Max.
320 to 1000
-
700
-
0.2 0.25
-
-
1
100
-
0.5 0.75
1.5
2
-
-
-
-0.5
Unit
nm
nm
A/W
pA
pF
GHz
dB
1