S8866-64_11 Datasheet, PDF (1/10 Pages) Hamamatsu Corporation – Photodiode array combined with signal processing IC

Photodiode arrays with ampli¿er
S8866-64/-128
Photodiode array combined with signal
processing IC
The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC
chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and
hold circuit, making the external circuit con¿guration simple. For X-ray detection applications, types (S8866-64G-02, S8866-
128G-02) with phosphor sheet af¿xed on the photosensitive area are also available.
Features
Large element pitch: 2 types available
S8866-64: 1.6 mm pitch × 64 ch
S8866-128: 0.8 mm pitch × 128 ch
5 V power supply operation
Simultaneous integration by using a charge ampli¿er array
Sequential readout with a shift register
(Data rate: 500 kHz max.)
Low dark current due to zero-bias photodiode operation
Integrated clamp circuit allows low noise and wide dynamic range
Integrated timing generator allows operation at two
different pulse timings
Applications
Long and narrow line sensors
Structure
Parameter
Symbol*¹
S8866-64
S8866-128
Unit
Element pitch
P
1.6
0.8
mm
Element diffusion width
W
1.5
0.7
mm
Element height
H
1.6
0.8
mm
Number of elements
-
64
128
-
Effective photosensitive area length
-
102.4
102.4
mm
Board material
-
Ceramic
-
*1: Refer to following ¿gure.
Enlarged drawing of photosensitive area
W
Photodiode
P
KMPDC0072EA
www.hamamatsu.com
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