S8865-64G Datasheet, PDF (1/15 Pages) Hamamatsu Corporation – Photodiode array combined with signal processing IC for X-ray detection

Photodiode arrays with ampli¿er
S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
Photodiode array combined with signal
processing IC for X-ray detection
The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray
detection. The signal processing circuit chip is formed by CMOS process and incorporates a timing generator, shift register, charge
ampli¿er array, clamp circuit and hold circuit, making the external circuit con¿guration simple. A long, narrow image sensor can
be con¿gured by arranging multiple arrays in a row.
As the dedicated driver circuit, the C9118 series (sold separately) is provided. (Not compatible with the S8865-256G.)
Features
Large element pitch: 5 types available
S8865-64G: 0.8 mm pitch × 64 ch
S8865-128G: 0.4 mm pitch × 128 ch
S8865-256G: 0.2 mm pitch × 256 ch
S8866-64G-02: 1.6 mm pitch × 64 ch
S8866-128G-02: 0.8 mm pitch × 128 ch
5 V power supply operation
Simultaneous integration by using a charge ampli¿er array
Sequential readout with a shift register
(Data rate: 500 kHz max.)
Low dark current due to zero-bias photodiode operation
Integrated clamp circuit allows low noise and wide dynamic range
Integrated timing generator allows operation at two
different pulse timings
Detectable energy range: 30 k to 100 keV
Applications
Line sensors for X-ray detection
Speci¿cations
Parameter
Element pitch
Element diffusion width
Element height
Number of elements
Active area length
Line rate
*1: Refer to following ¿gure.
Symbol*¹
P
W
H
-
-
-
Enlarged view of active area
S8865-64G
0.8
0.7
0.8
64
51.2
7339
S8865-128G
0.4
0.3
0.6
128
51.2
3784
S8865-256G
0.2
0.1
0.3
256
51.2
1922
S8866-64G-02
1.6
1.5
1.6
64
102.4
6838
S8866-128G-02
0.8
0.7
0.8
128
102.4
3784
Unit
mm
mm
mm
-
mm
lines/s
W
Photodiode
P
KMPDC0072EA
www.hamamatsu.com
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