S8865-256 Datasheet, PDF (1/6 Pages) Hamamatsu Corporation – Photodiode array combined with signal processing circuit chip

PHOTODIODE
Photodiode array with amplifier
S8865-256, S8865-256G
Photodiode array combined with signal processing circuit chip
S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external
circuit configuration simple. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. For X-ray detection
applications, types with fluorescent paper affixed on the active area are also available.
Features
l Element pitch: 0.2 mm pitch × 256 ch
l 5 V power supply operation
l Simultaneous integration by using a charge amplifier
array
l Sequential readout with a shift register
(Data rate: 1 MHz Max.)
l Low dark current due to zero-bias photodiode
operation
l Integrated clamp circuit allows low noise and wide
dynamic range
l Integrated timing generator allows operation at two
different input pulse timings (reset, clock)
l Types with phosphor screen affixed on the active area are
available for X-ray detection: S8865-256G
Applications
l Long line sensors
l Line sensors for X-ray detection
s Specifications of active area
Parameter
Symbol *¹
Value
Unit
Element pitch
P
0.2
mm
Element width
W
0.1
mm
Element height
H
0.3
mm
Number of elements
-
256
-
Active area length
-
51.2
mm
*1: Refer to following figure.
s Enlarged view of active area
W
PHOTODIODE
P
KMPDC0072EB
1