S8745-01 Datasheet, PDF (1/5 Pages) Hamamatsu Corporation – Photodiode and preamp integrated with feedback resistance and capacitance

PHOTODIODE
Si photodiode with preamp
S8745-01, S8746-01
Photodiode and preamp integrated with feedback resistance and capacitance
S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a
small package. By simply connecting to a power supply, S8745-01 and S8746-01 can be used in low-light-level measurement such as analytical
equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant
to EMC noise.
Features
l Si photodiode for UV to near IR precision photometry
l Small hermetic sealed package with quartz window
S8745-01: TO-5
S8746-01: TO-8
l Active area
S8745-01: 2.4 × 2.4 mm
S8746-01: 5.8 × 5.8 mm
l FET input operational amplifier with low power
dissipation
l Built-in Rf=1 GΩ and Cf=5 pF
l Variable gain with an externally connected resistor
l Low noise and NEP
l Package with shielding effect
l Resistant to EMC noise
Applications
l Spectrophotometry
l General-purpose optical measurement
S8745-01, S8746-01 may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Supply voltage (op amp)
Vcc
±20
V
Power dissipation
P
500
mW
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-30 to +80
°C
s Electrical and optical characteristics (Typ. Ta=25 °C, Vcc=±15 V, RL=1 MΩ, unless otherwise noted)
Parameter
Symbol
Condition
S8745-01
S8746-01
Spectral response range
λ
190 to 1100
Peak sensitivity wavelength
λp
960
Feedback resistance (built-in)
Rf
1
Feedback capacitance (built-in)
Cf
5
Photo sensitivity
S
λ=200 nm
λ=λp
0.12
0.52
Output noise voltage
Vn
Dark state f=10 Hz
Dark state, f=20 Hz
6
5
7
6
Noise equivalent power
NEP
λ=λp, f=10 Hz
λ=λp, f=20 Hz
11
11
15
15
Output offset voltage
Vos Dark state
±4
Cut-off frequency
fc -3 dB
32
Output voltage swing
Vo
13
Supply current
Icc Dark state
0.3
Unit
nm
nm
GΩ
pF
V/nW
µVrms/Hz^1/2
fW/Hz^1/2
mV
Hz
V
mA
1