S8650_15 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – Si PIN photodiode

Si PIN photodiode
S8650
Flat surface ideal for bonding to scintillator
The S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 μm). When
bonded to a scintillator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in
between.
We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order
with us.
Features
Flat epoxy coating surface ideal for bonding to scintillator
Flatness: ±5 μm
Photosensitive area: 10 × 10 mm
Applications
Scintillation X-ray detectors
Calorimeters, etc.
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
100
V
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Spectral response range
λ
-
Peak sensitivity wavelength λp
-
λ=λp
-
Photosensitivity
S
BGO: λ=480 nm
-
CsI (Tl): λ=540 nm
-
Dark current
ID
VR=70 V
-
Cutoff frequency
fc
λ=780 nm, VR=70 V
RL=50 Ω, -3 dB
-
Terminal capacitance
Ct VR=70 V, f=1 MHz
-
Noise equivalent power
NEP VR=70 V, λ=λp
Typ.
340 to 1100
960
0.66
0.30
0.37
2
40
40
3.8 × 10^-14
Max.
-
-
-
-
-
6
-
-
-
Unit
nm
nm
A/W
A/W
A/W
nA
MHz
pF
W/Hz^1/2
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