S8650 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode Flat surface ideal for bonding to scintillator

PHOTODIODE
Si PIN photodiode
S8650
Flat surface ideal for bonding to scintillator
S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 µm). When bonded to a scintillator, the flat
surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between.
We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us.
Features
l Flat epoxy coating surface ideal for bonding to scintillator
Flatness: ±5 µm
l Active area: 10 × 10 mm
(Other sizes are also available on request.)
Applications
l Scintillation X-ray detectors
l Calorimeters, etc.
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Reverse voltage
VR Max.
Operating temperature
Topr
Storage temperature
Tstg
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp
λ=λp
Photo sensitivity
S BGO: λ=480 nm
CsI (Tl): λ=540 nm
Dark current
ID
VR=70 V
Cut-off frequency
fc
λ=780 nm, VR=70 V
RL=50 Ω, -3 dB
Terminal capacitance
Ct VR=70 V, f=1 MHz
Noise equivalent power
NEP VR=70 V, λ=λp
Value
100
-20 to +60
-20 to +80
Min.
Typ.
-
320 to 1100
-
960
-
0.66
-
0.30
-
0.37
-
2
-
40
-
40
3.8 × 10^-14
Max.
-
-
-
-
-
6
-
-
-
Unit
V
°C
°C
Unit
nm
nm
A/W
A/W
A/W
nA
MHz
pF
W/Hz^1/2
1