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S8594 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Quadrant photodiode with slit mask for encoder
PHOTODIODE
Si PIN photodiode
S8594
Quadrant photodiode with slit mask for encoder
S8594 is a quadrant photodiode array with a slit mask (code strip) formed on the Si chip surface.
Features
l Quadrant photodiode with slit mask of
L/S (Line/Space)=10/10 µm
l Uses a light-shielded, non-reflective black slit
l o Active area: 5 mm/4 elements
(element gap: 50 µm)
l Bare chip type (window-less)
Applications
l Encoder
I Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Reverse voltage
VR Max.
Operating temperature
Topr
Storage temperature
Tstg
* No condensation
Value
30
0 to +60 *
0 to +80 *
I Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Min.
Spectral response range
l
-
Peak sensitivity wavelength
lp
-
Photo sensitivity
S l=lp
0.60
Dark current
ID
VR=10 V
-
Terminal capacitance
Ct VR=10 V, f=1 MHz
-
Cut-off frequency
fc
VR=10 V, RL=50 W
l=780 nm, -3 dB
-
Typ.
320 to 1100
960
0.72
0.3
10
25
Max.
-
-
-
2.0
-
-
Unit
V
°C
°C
Unit
nm
nm
A/W
nA
pF
MHz
S8594 uses a window-less package with no protection for the photodiode chip. Always take the following precautions when
handling.
I Handling precautions
G Handle the photodiode in a clean room.
G Never touch the photodiode chip surface and wire bonding.
G Wear dust-proof gloves and dust-proof mask.
G Use an air dust cleaner to blow dust and foreign matter away from the photodiode chip surface.
G Do not clean the photodiode by any method other than air blow.
1