S8551 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Photodiodes for VUV (Vacuum UV) detection

PHOTODIODE
Si photodiode
S8551, S8552, S8553
Photodiodes for VUV (Vacuum UV) detection
S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide
optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
conventional types.
Features
l Reliable detection improves of ArF excimer laser
(λ=193 nm)
l Large active area
S8551: 5.8 × 5.8 mm
S8552: 10 × 10 mm
S8553: 18 × 18 mm
l Windowless package
S8551: TO-8 metal package
S8552: 16.5 × 15.0 mm ceramic package
S8553: 25.5 × 25.5 mm ceramic package
Applications
l ArF excimer laser detection
l Detection of various UV light sources
I Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
5
V
Operating temperature
Topr
-20 to +60 *
°C
Storage temperature
Tstg
-55 to +80 *
°C
* No condensation
I Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition
S8551
Min. Typ.
P h oto sensitivity _{S λ=193 nm}
45 60
Dark current
ID VR=10 mV
- 0.02
Terminal
capacitance
Ct VR=0 V, f=10 kHz -
1.0
Rise time
tr
VR=0 V, RL=1 kΩ
10 to 90 %
-
2
Max.
-
0.5
-
-
S8552
Min. Typ. Max.
45 60
-
- 0.05 1.0
-
4.0
-
-
9
-
S8553
Min. Typ. Max.
45 60
-
-
0.1 5.0
-
8.0
-
-
18
-
Unit
mA/W
nA
nF
µs
S8551, S8552 and S8553 use windowless packages with no protection on the photodiode chip. Always use the following
precautions when handling these photodiodes.
I Handling precautions
G Handle the photodiodes in a clean room.
G Never touch the photodiode chip surface and wire bonding.
G Wear dust-proof gloves and dust-proof mask.
G Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface.
G Do not clean the photodiodes by any method other than air blow.
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