S8380_10 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – NMOS linear image sensors with high IR sensitivity

IMAGE SENSOR
NMOS linear image sensor
S8380/S8381 series
NMOS linear image sensors with high IR sensitivity
S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image
sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm).
The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S8381 series also
have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series, 128
(S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard
window material.
Features
Applications
l High sensitivity in the IR and soft X-ray regions
l Wide active area
l Multichannel spectrophotometry
l Image readout system
Pixel pitch: 50 µm (S8380 series)
25 µm (S8381 series)
Pixel height: 2.5 mm
l High UV sensitivity with good stability
l Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l Excellent output linearity and sensitivity spatial uniformity
l Lower power consumption: 1 mW max.
l Start pulse and clock pulses are CMOS logic compatible
sçEquivalent circuit
s Active area structure
Start st
Clock 1
Clock 2
Active
photodiode
Digital shift register
(MOS shift register)
End of scan
Active video
Saturation
control gate
Saturation
control drain
Dummy diode
Vss
Dummy video
Oxidation silicon
b
a
KMPDC0020EA
N type silicon
P type silicon
s Absolute maximum ratings
Parameter
Input pulse (φ1, φ2, φst) voltage
Power consumption*¹
Operating temperature*²
Storage temperature
*1: Vφ=5.0 V
*2: No condensation
Symbol
Vφ
P
Topr
Tstg
S8380 series: a=50 µm, b=45 µm
S8381 series: a=25 µm, b=20 µm
Value
15
1
-40 to +65
-40 to +85
KMPDA0125EA
Unit
V
mW
°C
°C
1