S8193 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si photodiode Detector for X-ray monitors

PHOTODIODE
Si photodiode
S8193
Detector for X-ray monitors
Features
l High sensitivity, high reliability photodiode with
ceramic scintillator
l High X-ray sensitivity: 1.8 times that of CWO
l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
l Unlike CsI, has no deliquescence
Applications
l X-ray analysis, X-ray detection
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
5
V
Operating temperature
Topr
-10 to +60
°C
Storage temperature
Tstg
-20 to +70
°C
s Electrical and optical characteristics (without scintillator, Ta=25°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
190 to 1000
-
nm
Peak sensitivity wavelength
λp
720
-
nm
Photo sensitivity
S
λ=500 nm
λ=λp
-
0.26
-
A/W
-
0.5
-
A/W
Dark current
ID
VR=10 mV
-
2
50
pA
Terminal capacitance
Ct VR=0 V, f=10 kHz
-
950
-
pF
s X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm)
X-ray tube voltage
Typ.
Unit
120 keV
30
nA
Note) Depends on equipment and measurement conditions.
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