S7998 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – Si photodiode with preamp

PHOTODIODE
Si photodiode with preamp
S7998
Photodiode (3 × 3 mm)/preamplifier assembly in compact package
S7998 is a UV to near IR detector using a 3 × 3 mm photodiode integrated with preamplifier. The photodiode chip and the preamplifier are
assembled at high density by direct bump connections. The preamplifier bias current is so small that a high feedback resistance of 1 GΩ can be
used. Built-in feedback resistance types and metal package types are also available upon request.
Features
l Compact ceramic package: 13.2 × 7.37 mm
l Uses a UV to near IR Si photodiode (3 × 3 mm)
for high-precision photometry
l Uses a low bias current preamplifier: Ib=64 pA Max.
l Low noise
l Low current consumption
Applications
l Precision photometry
l General photometry
I Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Preamp supply voltage
Vcc
Photodiode reverse voltage
VR
Operating temperature
Topr
Storage temperature
Tstg
Value
±6
5
-20 to +60
-20 to +80
I Electrical and optical characteristics of photodiode (Ta=25 °C)
Parameter
Symbol Condition
Min.
Spectral response range
l
-
Peak sensitivity wavelength
lp
-
Photo sensitivity
S
l=200 nm
l=lp
0.1
-
Dark current
ID VR=10 mV
-
Shunt resistance
Rsh VR=10 mV
-
Terminal capacitance
Ct VR=0 V, f=10 kHz
-
Typ.
190 to 1100
880
0.12
0.43
50
0.2
120
I Electrical and optical characteristics of preamp (Ta=25 °C, Vcc=±5 V)
Parameter
Symbol Condition
Min.
Typ.
Input offset voltage
Vos
-
±0.7
Input offset voltage temperature drift _DVos
-
4
Input bias current
Ib
±1
Input offset current
Ios
-
0.5
Output voltage amplitude
Vo RL=2 kW
±4.8
±4.9
Gain bandwidth
GBW
-
1.3
Equivalent noise input voltage
Vn f=10 kHz
-
33
Equivalent noise input current
In f=10 kHz
-
1.5
Supply current
Icc
-
1.3
Max.
-
-
-
-
250
-
-
Max.
±5
-
±64
32
-
-
-
-
1.7
Unit
V
V
°C
°C
Unit
nm
nm
A/W
A/W
pA
GW
pF
Unit
mV
µV/°C
pA
pA
V
MHz
nVrms/Hz^1/2
fA/Hz^1/2
mA
1