S7878 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si photodiode High sensitivity X-ray detector

PHOTODIODE
Si photodiode
S7878
High sensitivity X-ray detector
Features
l Ceramic scintillator for high sensitivity and reliability
unlike CsI (ceramic scintillator: no deliquescence)
l 5 × 5 element photodiode array
l High sensitivity to X-rays: 1.8 times higher sensitivity
than CWO
l Less afterglow: lower than CsI
<0.1 %/3 ms, <0.01 %/30 ms
l Low crosstalk structure
Applications
l X-ray fluorescence analysis
l X-ray detection
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
10
V
Operating temperature
Topr
-10 to +60
°C
Storage temperature
Tstg
-20 to +70
°C
s Photodiode electrical and optical characteristics (Ta=25 °C, per element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
320 to 1000
-
nm
Peak sensitivity wavelength
λp
-
800
-
nm
Photo sensitivity
S
λ=510 nm
λ=λp
0.33
0.38
0.44
0.51
-
A/W
-
A/W
Dark current
ID VR=10 mV
-
1.5
10
pA
Terminal capacitance
Ct VR=0 V, f=10 kHz
-
20
-
pF
s X-ray sensitivity (tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm)
X-ray tube voltage
Value
Unit
120 kV
1.2
nA
Note) Sensitivity values are just for your reference. Actual sensitivity values may vary depending on an equipment type and
measurement conditions.
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