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S7797 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode
PHOTODIODE
Si PIN photodiode
S7797, S5052, S8255, S5573
φ3 mm lens plastic package
These Si PIN photodiodes are molded into to a clear plastic package with a φ3 mm lens. To meet your application, various types are
available with different time response characteristics.
Features
l Clear plastic package with φ3 mm lens
l High-speed response
S7797: 500 MHz Typ. (VR=2.5 V)
S5052: 500 MHz Typ. (VR=5 V)
S8255: 200 MHz Typ. (VR=5 V)
S5573: 80 MHz Typ. (VR=5 V)
Applications
l Laser diode monitor in optical disk drive (high-speed APC)
l Spatial light transmission
s General ratings / Absolute maximum ratings
Type No.
Package
Active
area size
S7797
S5052
S8255
S5573
(mm)
Plastic package
with lens
(mm)
φ3.0
Effective
active area
(mm2)
7.0
Reverse
voltage
VR Max.
(V)
Absolute maximum ratings
Power
Operating
dissipation temperature
P
Topr
(mW)
(°C)
Storage
temperature
Tstg
(°C)
20
50
-25 to +85 -40 to +100
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S7797
S5052
S8255
S5573
Photo sensitivity Short
Spectral Peak
S
circuit
response sensitivity
(A/W)
current
range wavelength
Isc
λ
λp
λp
660 780 830 100 lx
nm nm nm 2856 K
Dark current
ID
(nA)
Temp.
coefficient
of ID
TCID
Cut-off
frequency
fc
RL=50 Ω
-3dB
Terminal
capacitance
Ct
f=1 MHz
NEP
(nm) (nm)
(µA) Typ. Max. (times/°C) (MHz)
(pF)
(W/Hz1/2)
320 to 1000
760
800
0.52 0.48 0.51 0.48
0.46 0.4 0.45 0.45
2.8
0.01 *1 0.3 *1
0.02 *2 0.3 *2
320 to 1060 900 0.53 0.4 0.48 0.5
4.0 0.01 *2 1 *2
4.5 0.025 *2 1 *2
1.15
500 *1
500 *2
200 *2
80 *2
6 *1 3.4 × 10-15 *1
4 *2 5.5 × 10-15 *2
3 *2
3.4 × 10-15 *2
5.3 × 10-15 *2
*1: VR=2.5 V
*2: VR=5 V