S7183 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Photo IC diode Linear current amplification of photodiode output

PHOTO IC
Photo IC diode
S7183, S7184
Linear current amplification of photodiode output
S7183 and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to
1300 times. Despite a small active area, these photo ICs provide an output nearly equal to that from photodiodes with a 20 × 20 mm active area.
Both S7183 and S7184 can be used the same way as a reverse-biased photodiode, and in most cases, they deliver a sufficient output voltage by
just connecting a load resistor.
Features
l Clear plastic package
l Operation just as easy as using photodiodes
l Large output current rivaling that of a phototransistor
l Good linearity
Applications
l Energy saving sensors for TV brightness controls, etc.
l Light dimmers for liquid crystal panels
l Various types of light level measurement
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
-0.5 to 16
V
Photocurrent
IL
Forward current
IF
Power dissipation *¹
P
10
mA
10
mA
250
mW
Operating temperature
Topr
-30 to +80
°C
Storage temperature
Tstg
-40 to +85
°C
Soldering
-
S7183
S7184
260 °C, 3 s, at least 2.5 mm away from package surface
-
230 °C, 5 s,
*1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
300 to 1000
-
nm
Peak sensitivity wavelength
λp
-
650
-
nm
Operating reverse voltage
VR
3
-
12
V
Dark current
ID VR=5 V
-
0.5
10
nA
Photocurrent
IL
VR=5 V S7183, 100 lx
2856 K S7184, 1000 lx
0.75
1.4
1.0
1.8
1.25
2.2
mA
10 to 90 %, *²
Rise/fall time
tr, tf VR=5 V, RL=10 kΩ
-
0.6
-
ms
λ=660 nm
*2: Rise/fall time measurement method
l=660 nm
LED
PULSE DRIVE
90 %
VO
2.5 V
10 %
0.1 µF
7.5 V
tr
tf
VO
LOAD RESISTANCE RL
KPICC0041EA