S6045 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Low temperature coefficient type APD for 800 nm band

PHOTODIODE
Si APD
S6045 series
Low temperature coefficient type APD for 800 nm band
Features
l Low temperature coefficient: 0.4 V/˚C
l High-speed response
l High sensitivity, low noise
Applications
l Optical fiber communications
l Spatial light transmission
l Rangefinder
s General ratings / Absolute maximum ratings
Type No.
S6045-01
S6045-02
S6045-03
S6045-04
S6045-05
S6045-06
Dimensional
outline/
Window
material *¹
➀/K
➁/K
➂/K
{/K
Package
TO-18
TO-5
TO-8
Effective active
area size *²
(mm)
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
Effective active
area
(mm²)
0.03
0.19
0.78
1.77
7.0
19.6
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Absolute maximum ratings
Operating
Storage
temperature
temperature
Topr
Tstg
(°C)
(°C)
-40 to +85
-55 to +125
Type No.
Spectral
response
range
λ
Peak *³
sensitivity
w a v e le n g th
λp
Photo Quantum B rea kd o w n
sensitivity efficiency vo lta ge
S
QE
VBR
M=1
M=1 ID=100 µA
λ=800 nm λ=800 nm
Temp.
coefficient
of
VBR
Dark
current *³
ID
Cut-off
frequency *³
fc
RL=50 Ω
T erm inal
capacitance
Ct
Excess
noise
*³ figure *³
x
λ=800 nm
Gain
M
λ=800 nm
Typ. Max.
Typ. Max.
(nm)
(nm) (A/W)
(%) (V) (V) (V/°C) (nA) (nA) (MHz) (pF)
S6045-01
0.05 0.5 1000
1.5
S6045-02
S6045-03
S6045-04
400 to 1000
800
0.5
0.1 1 900
3
75
200 300 0.4
0.2 2
0.5 5
600
350
6
12
100
0.3
S6045-05
1 10 80
50
60
S6045-06
3 30 35
120
40
*1: K: borosilicate glass
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
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